BSS123 Overview
These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other...
BSS123 Key Features
- 0.17 A, 100 V
- RDS(on) = 6 W @ VGS = 10 V
- RDS(on) = 10 W @ VGS = 4.5 V
- High Density Cell Design for Extremely Low RDS(on)
- Rugged and Reliable
- pact Industry Standard SOT-23 Surface Mount Package
- This Device is Pb-Free and Halogen Free
- Date Code orientation and/or position may vary depending upon manufacturing location
- Rev. 11
