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BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS123 Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General .
These N. Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

BSS123 Features

* 0.17 A, 100 V
* RDS(on) = 6 W @ VGS = 10 V
* RDS(on) = 10 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(on)
* Rugged and Reliable
* Compact Industry Standard SOT
* 23 Surface Mount Package
* This Device is Pb

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N-Channel Logic Level Enhancement Mode Field Effect Transistor ON Semiconductor
ON Semiconductor BSS123-like datasheet