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BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 0.17 A, 100 V.
  • RDS(on) = 6 W @ VGS = 10 V.
  • RDS(on) = 10 W @ VGS = 4.5 V.
  • High Density Cell Design for Extremely Low RDS(on).
  • Rugged and Reliable.
  • Compact Industry Standard SOT.
  • 23 Surface Mount Package.
  • This Device is Pb.
  • Free and Halogen Free DATA SHEET www. onsemi. com D G S SOT.
  • 23.
  • 3 CASE 318.
  • 08.

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Datasheet Details

Part number BSS123
Manufacturer onsemi
File Size 215.50 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet BSS123 Datasheet

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Full PDF Text Transcription

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • 0.17 A, 100 V ♦ RDS(on) = 6 W @ VGS = 10 V ♦ RDS(on) = 10 W @ VGS = 4.
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